ARSENIC ION-IMPLANTATION THROUGH MO AND MO SILICIDE LAYERS FOR SHALLOW JUNCTION FORMATION

Arsenic implantation through either Mo films or Mo disilicide layers, followed by rapid thermal annealing has been investigated as a self-aligned process to fabricate n+-p shallow junctions for ultra-large-scale integration technology. Both procedures give junctions shallower than 0.2-mu-m with good electrical characteristics. Reverse current densities down to 2 nA cm-2 at - 1 V, ideality factors as low as 1.05 and contact resistivities in the range 10(-7) OMEGA-cm2 are measured. An excellent planarity of the Si-silicide interface is exhibited by the diodes fabricated by As implantation through Mo. A structural investigation on the silicidation process induced by As implantation through Mo is reported.