Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p(+)-i-n diodes
Conference Paper
Publication Date:
2014
abstract:
In this work the temperature dependent current-voltage characteristics of microwave annealed 4H-SiC vertical p(+)-i-n diodes are studied to identify some of the traps which affect the generation-recombination current of these diodes.
Iris type:
04.01 Contributo in Atti di convegno
Keywords:
4H-SiC; p-i-n diode; ion-implantation; Arrhenius plot; recombination-generation centers
List of contributors:
Moscatelli, Francesco; Nipoti, Roberta
Book title:
IEEE proceedings "Ion Implantation Technology (IIT), 2014 20th International Conference on"