Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p(+)-i-n diodes

Contributo in Atti di convegno
Data di Pubblicazione:
2014
Abstract:
In this work the temperature dependent current-voltage characteristics of microwave annealed 4H-SiC vertical p(+)-i-n diodes are studied to identify some of the traps which affect the generation-recombination current of these diodes.
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Keywords:
4H-SiC; p-i-n diode; ion-implantation; Arrhenius plot; recombination-generation centers
Elenco autori:
Autori di Ateneo:
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/307012
Titolo del libro:
IEEE proceedings "Ion Implantation Technology (IIT), 2014 20th International Conference on"