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Analysis of dislocations and associated impurity atmospheres in bulk GaAs by means of SEM-EBIC measurements and DSL photoetching

Abstract
Publication Date:
1988
Iris type:
04.02 Abstract in Atti di convegno
Keywords:
GaAs; LEC; dislocations; EBIC; photoetching
List of contributors:
Frigeri, Cesare
Handle:
https://iris.cnr.it/handle/20.500.14243/116818
Published in:
INSTITUTE OF PHYSICS CONFERENCE SERIES
Series
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