Incorporation of active Fe impurities in GaInP by High Temperature Ion implantation

Single GaInP layers, grown by MOVPE lattice matched to GaAs, were implanted with Fe at T = 200 °C and annealed at 450 or 600 °C. The role of implantation temperature and fluence in determining the crystal damage, and the damage recovery by annealing are investigated by RBS-channeling measurements. The redistribution of the Fe atoms is studied by means of SIMS depth profiling. The electrical properties related to Fe implantation are studied by current-voltage measurements. The results allow a first analysis of the similarities and the differences showed by the Fe implanted GaInP with respect to the InP case.