Intermodulation distortion measurements of MgB2 thin films grown by HPCVD

The two tone intermodulation distortion (IMD) arising in MgB2 thin films synthesized by hybrid physical-chemical vapour deposition (HPCVD) is studied in order to probe the influence of the two bands on the symmetry of the gap function. The measurements are carried out by using a dielectrically loaded copper cavity operating at 7 GHz. Microwave data on samples having critical temperatures above 41 K, very low resistivity values, and residual resistivity ratio larger than 10, are shown. The dependence of the nonlinear surface losses and of the third order intermodulation products on the power feeding the cavity and on the temperature is analyzed. At low power, IMD versus temperature data show the intrinsic s-wave behaviour expected for this compound