MOCVD of Cr3(C, N)2 and CrSixCy films - I. Growth and characterization

CrCxNy and CrSixCy thin films were deposited under low pressure by metallorganic chemical vapor deposition (MOCVD) in the temperature ranges 380-450°C and 450-500°C, respectively, using Cr(NEt2)4 and Cr(CH2SiMe 3)4 as single-source precursors. The growth was achieved in a cold-wall vertical reactor using, respectively, H2 and He as the carrier gases. Both types of films exhibit a mirrorlike surface morphology and are amorphous as-deposited. The CrCxNy, layers start to crystallize at 600°C after annealing for 1h under vacuum, whereas it is necessary to reach 650°C under H2 atmosphere. In both cases, the original ternary phase Cr3(C0.8N0.2) 2 crystallizes. The resistivity of as-deposited amorphous CrC xNy, films is typically 600 ?? cm, and it decreases to 150 ?? cm after annealing upon the formation of polycrystalline Cr3(C,N)2 films. The CrSi xCy layers have a very stable amorphous structure until 850°C for 4 h. In spite of their metallic appearance, they exhibit a high resistivity compared to the Cr3(C,N)2 films. The main characteristics of these Cr-based layers is presented and discussed