Al+ Implanted 4H-SiC p+-i-n Diodes: Evidence for Post-Implantation- Annealing Dependent Defect Activation

Conference Poster
Publication Date:
2013
Iris type:
04.03 Poster in Atti di convegno
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/286232