Data di Pubblicazione:
2016
Abstract:
The complex electronic properties of ZrTe5 have recently stimulated in-depth investigations that assigned this material to either a topological insulator or a 3D Dirac semimetal phase. Here we report a comprehensive experimental and theoretical study of both electronic and structural properties of ZrTe5, revealing that the bulk material is a strong topological insulator (STI). By means of angle-resolved photoelectron spectroscopy, we identify at the top of the valence band both a surface and a bulk state. The
dispersion of these bands is well captured by ab initio calculations for the STI case, for the specific interlayer distance measured in our X-ray diffraction study. Furthermore, these findings are supported by scanning tunneling spectroscopy revealing the metallic character of the sample surface, thus confirming the strong topological nature of ZrTe5.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
Topological insulators; Electronic and structural properties; Ab initio calculations; Angle resolved photoelectron spectroscopy; Scanning tunneling microscopy; Interlayer distance; X-ray diffraction
Elenco autori:
Barba, Luisa; Zacchigna, Michele; Vobornik, Ivana
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