Monte Carlo study of the early growth stages of 3C-SiC on misoriented < 11-20 > and < 1-100 > 6H-SiC substrates

In this paper we used three dimensional kinetic Monte Carlo simulations on super-lattices to study the hetero-polytypical growth of cubic silicon carbide polytype (3C-SiC) on hexagonal 6H-SiC substrates with miscuts towards the <11-20> and <1-100> directions. We analyze the grown film for different miscut angles (in the range 2 degrees to 12 degrees degrees) and different growth rates, finding that substrates with miscut of 3-4 degrees degrees towards the <1-100> direction should be the best choice for the growth of high quality cubic epitaxial films, being able to promote, given a suitable pre-growth treatment to induce step bunching, the nucleation of single domain 3C-SiC films.