Electrical characterization of a buried GaSb p-n junction controlled by native defects

Buried GaSb junctions were induced in Te-doped GaSb bulk crystals by growing a heavily Zn-doped GaAs layer on GaSb. However, the p-n junction resulted to be located much more deeply with respect to the Zn diffusion front and originated by a local rising up of native acceptor density, which controls the p-type conductivity conversion of the GaSb substrate for about 1 ?m beyond the Zn penetration depth. Admittance spectroscopy measurements supported the identification of such defects with the double native acceptor GaSb. Current-voltage characteristics of the p-n junction, performed after the removal of the GaAs layer, were here analyzed as a function of the temperature for different Zn doping levels and resulted consistent with the model previously proposed to explain the formation of the junctions.