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N atoms recombination on a silica surface: a global theoretical approach

Articolo
Data di Pubblicazione:
2006
Abstract:
The paper reports on a semiclassical dynamics study about N2 formation after nitrogen atom recombination on a silica surface via the Eley-Rideal collisional mechanism at T = 1000 K. The molecular dynamics study was carried out using a fitted potential energy surface based on new density functional computations on clusters cleaved from the b-cristobalite unit cell. The B3LYP results obtained using silica clusters of increasing dimensions (up to Si7O14H14) show that only atomic nitrogen is adsorbed (binding energy Eb ffi 2.7- 2.8 eV). Then, the obtained potential energy surface has been used in a time-dependent semiclassical collisional method which is able to describe, at a very detailed level, the recombination of N atoms on the surface assisted by the phonon excitation mechanism of the substrate. The recombination coefficient c of the Eley-Rideal recombination mechanism was calculated together with the reaction energetics
Tipologia CRIS:
01.01 Articolo in rivista
Elenco autori:
Cacciatore, MARIO ANTONIO; Rutigliano, Maria
Autori di Ateneo:
RUTIGLIANO MARIA
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/38409
Pubblicato in:
SURFACE SCIENCE
Journal
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