Spectroscopic signature of alloy-alloy interface in ingaas-gaas(001) stepped quantum wells
Academic Article
Publication Date:
2002
abstract:
Semiconductor eterostructures based on different compositions of
the same alloyes are important for the realization of new electronic
and photonic devices. Stepped quantum wells are considered as
good candidates for enhancement of non linear optical properties.
They have been, however , very few studies devoted to the properties
of the alloy-alloy interfaces common to all these materials.
Iris type:
01.01 Articolo in rivista