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Spectroscopic signature of alloy-alloy interface in ingaas-gaas(001) stepped quantum wells

Articolo
Data di Pubblicazione:
2002
Abstract:
Semiconductor eterostructures based on different compositions of the same alloyes are important for the realization of new electronic and photonic devices. Stepped quantum wells are considered as good candidates for enhancement of non linear optical properties. They have been, however , very few studies devoted to the properties of the alloy-alloy interfaces common to all these materials.
Tipologia CRIS:
01.01 Articolo in rivista
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/38241
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