Data di Pubblicazione:
2006
Abstract:
(Au nanocluster)/6H-SiC Schottky contacts were electrically characterized by conductive atomic force microscopy, collecting a high number of current-voltage (I-V) curves. The main observed result is the Schottky barrier height (SBH) dependence on the cluster size. The SBH increases from 1.35 +/- 0.01 to 1.77 +/- 0.01 eV when the cluster size increases from 1.5 to 6.8 nm and it tends, asymptotically, to the theoretical SBH of the macroscopic contact Au/SiC (similar to 1.9 eV). This behavior is interpreted considering the thermoionic transport theory through the Au cluster/SiC barrier coupled with the concept of ballistic transport within few electron quantum dots.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
SILICON-CARBIDE; ELECTRON; DIAMOND
Elenco autori:
Ruffino, Francesco; Grimaldi, MARIA GRAZIA; Raineri, Vito; Roccaforte, Fabrizio; Giannazzo, Filippo
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