Fabrication at wafer level of miniaturized gas sensors based on SnO(2) nanorods deposited by PECVD and gas sensing characteristics

SnO(2) nanorods were successfully deposited on 3" Si/SiO(2) wafers by inductively coupled plasma-enhanced chemical vapour deposition (PECVD) and a wafer-level patterning of nanorods layer for miniaturized solid state gas sensor fabrication were performed. Uniform needle-shaped SnO(2) nanorods in situ grown were obtained under catalyst- and high temperature treatment-free growth condition. These nanorods have an average diameter between 5 and 15 nm and a length of 160-300 nm. The SnO(2)-nanorods based gas sensors were tested towards NH(3) and CH(3)OH and gas sensing tests show remarkable response, showing promising and repeatable results compared with the SnO(2) thin films gas sensors.