RF Plasma-Assisted Femtosecond Pulsed Laser Deposition of Metals Nitride Thin Films

Metal nitrides have several peculiarities which allow their use in a great variety of devices and applications such as protective coatings, high efficiency multi-junction solar cells, terahertz emitters, high electron mobility transistors, chemical sensors, and high-brightness light emitting diodes, etc. Among the different production methods of nitride films, a 100 fs Ti:Sa has been employed with the help of a reactive nitrogen plasma generated by the 13.56 MHz radiofrequency to deposit thin films through a technique known as Reactive Pulsed Laser Ablation. Several parameters (laser wavelength, pulse energy, repetition rate, deposition temperature) have been varied for optimizing the properties of the processed samples. Structural, morphological, electrical, and spectroscopic characterizations have been used in order to identify the best settings of the investigated deposition parameters.