ISLAND FORMATION IN SB FILMS DEPOSITED AT ROOM-TEMPERATURE ON SI(100)2X1 SURFACES

The early stages of Sb films deposited at room temperature on Si(I 00)2 X 1 surfaces have been investigated by angle-integrated and angle-resolved Auger, spectroscopy. A comparison between the experimental results and the predictions of simple deposition models indicates that the growth of the Sb film proceeds by island formation. Without any annealing, a uniform overlayer never develops up to films 4 nm thick.