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A model for TID effects on floating gate memory cells

Academic Article
Publication Date:
2004
abstract:
[object Object]
Iris type:
01.01 Articolo in rivista
Keywords:
Floating gate (FG) memory arrays; Gamma rays; Irradiation; Single event effects (SEE); Total ionizing dose (TID); X-rays
List of contributors:
Lora, Silvano
Handle:
https://iris.cnr.it/handle/20.500.14243/36284
Published in:
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Journal
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