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High Bias Voltage CZT Detectors for High-flux Measurements

Contributo in Atti di convegno
Data di Pubblicazione:
2016
Abstract:
In this work, we present the performance of new travelling heater method (THM) grown CZT detectors, recently developed at IMEM-CNR Parma, Italy. Thick planar detectors (3 mm thick) with gold electroless contacts on CZT crystals grown by Redlen Technologies (Victoria BC, Canada) were realized, with a planar cathode covering the detector surface (4.1 x 4.1 mm(2)) and a central anode (2 x 2 mm(2)) surrounded by a guard ring electrode. The detectors, characterized by low leakage currents at room temperature (4.7 nA/cm(2) at 1000 V/cm), allow good room temperature operation even at high bias voltages (> 7000 V/cm). At low rates, the detectors exhibit an energy resolution around 4 % FWIEM at 59.5 keV (Am-241 source) up to 2200 V, by using a commercial front-end electronics (A250F/NF charge sensitive preamplifier, Amptek, USA; nominal equivalent noise charge ENC of 100 electrons RMS). At high rates (1 Mcps), the detectors, coupled to a custom-designed digital pulse processing electronics developed at DiFC of University of Palermo (Italy), show low spectroscopic degradations: energy resolution values of 8 % and 9.7 % FWFIM at 59.5 keV (241 Am source) were measured, with throughputs of 0.4 % and 60 % respectively. These activities are in the framework of an Italian research project on the development of energy-resolved photon counting (ERPC) systems for high flux energy-resolved X-ray imaging.
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Keywords:
High Flux; semiconductor detector; radiation detector; CZT; pixel; high bias voltage
Elenco autori:
Bettelli, Manuele; Zappettini, Andrea
Autori di Ateneo:
BETTELLI MANUELE
ZAPPETTINI ANDREA
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/349198
Pubblicato in:
IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD
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URL

https://ieeexplore.ieee.org/document/8069962
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