Continuous and modulated deposition of fluorocarbon films from c-C4F8 plasmas

Continuous and modulated c-C4F8 (perfluorocyclobutane) plasmas were used to deposit thin Teflon-like films. Gas phase and film composition and structure were investigated and the results can be rationalized with the deposition mechanism developed in a previous work for C2F4-modulated plasmas. The effect of modulation on the morphology and the chemistry of the surface were studied. CFx percentages as a function of the duty cycle for films deposited for 90 min from modulated discharges sustained at 100 W, 300 mtorr, and 6 sccm.