Publication Date:
2008
abstract:
: The multiform donor nature of hydrogen in n- type indium nitride is experimentally observed in samples exposed to atomic hydrogen. Photoluminescence measurements reveal a tenfold increase in the electron concentration and the formation of a shallow donor band upon hydrogen incorporation. Annealing studies show that hydrogen occupies at least two equilibrium sites having almost equivalent thermal stability.
Iris type:
01.01 Articolo in rivista
Keywords:
III-NITRIDES; SEMICONDUCTORS
List of contributors:
Losurdo, Maria; Bruno, Giovanni
Published in: