Data di Pubblicazione:
2008
Abstract:
: The multiform donor nature of hydrogen in n- type indium nitride is experimentally observed in samples exposed to atomic hydrogen. Photoluminescence measurements reveal a tenfold increase in the electron concentration and the formation of a shallow donor band upon hydrogen incorporation. Annealing studies show that hydrogen occupies at least two equilibrium sites having almost equivalent thermal stability.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
III-NITRIDES; SEMICONDUCTORS
Elenco autori:
Losurdo, Maria; Bruno, Giovanni
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