Local structure of Fe incorporated in GaInP layers by high temperature ion implantation

We have performed a structural investigation of the atomic environment of Fe impurities introduced by high temperature ion implantation in MOVPE grown GaInP layers. The lattice location of the implanted Fe atoms has been investigated by means of proton-induced X-ray emission in channeling geometry while X-ray absorption spectroscopy measurements have been performed to study the Fe local structure. The effect of post-implantation thermal treatments and the role of the substrate doping have been studied and discussed in comparison with the results obtained for Fe implantation in InP. An increased thermal stability of the substitutional Fe atoms in the GaInP lattice with respect to InP has been observed, whereas no effect related to the n-doping has been pointed out.