Resonant activation in bistable semiconductor lasers

We theoretically investigate the possibility of observing resonant activation in the hopping dynamics of
two-mode semiconductor lasers. We present a series of simulations of a rate-equation model under random and periodic modulation of the bias current. In both cases, for an optimal choice of the modulation time scale, the hopping times between the stable lasing modes attain a minimum. The simulation data are understood by
means of an effective one-dimensional Langevin equation with multiplicative fluctuations. Our conclusions
apply to both edge-emitting and vertical cavity lasers, thus opening the way to several experimental tests in
such optical systems.