Data di Pubblicazione:
2008
Abstract:
Gap opening in graphene is usually discussed in terms of a semiconductinglike spectrum, where the appearance of a finite gap at the Dirac point is accompanied by a finite mass for the fermions. In this paper we propose a gap scenario from graphene which preserves the massless characters of the carriers. This approach explains recent spectroscopic measurements carried out in epitaxially grown graphene, ranging from photoemission to optical transmission.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
EPITAXIAL GRAPHENE; CONDUCTIVITY; BANDGAP
Elenco autori:
Benfatto, Lara; Cappelluti, Emmanuele
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