Growth of straight, atomically perfect, highly metallic silicon nanowires with chiral asymmetry
Articolo
Data di Pubblicazione:
2008
Abstract:
In the quest of nano-objects for future electronics, silicon nanowires could possibly take over carbon nanotubes. Here we show the growth by self-organization of straight, massively parallel silicon nanowires having a width of 1.6 nm, which are atomically perfect and highly metallic conductors. Surprisingly, these silicon nanowires display a strong symmetry breaking across their widths with two chiral species that self-assemble in large left-handed and right-handed magnetic-like domains.
Tipologia CRIS:
01.01 Articolo in rivista
Elenco autori:
DE PADOVA, IRENE PAOLA; Olivieri, Bruno; Perfetti, Paolo; Quaresima, Claudio
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