PECVD of h-BN and c-BN films from boranedimethylamine as a single source precursor

Boron nitride (BN) thin films have been successfully synthesised via low pressure plasma enhanced chemical vapour deposition (PECVD) by using boranedimethylamine, BH3NH(CH3)2, as a single source precursor in the temperature range 280-550 °C in a nitrogen-argon atmosphere. The plasma power was optimised with the aim of obtaining suitable cubic/hexagonal phase ratios. The annealing of the h-BN films at temperatures up to 1000 °C in a nitrogen atmosphere, at normal pressure, gave rise to a complete transformation into the cubic phase. FTIR measurements provided a suitable method for identifying the structure of BN films. UV-vis spectroscopy was carried out in order to investigate the optical behaviour of the films.