Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer

Academic Article

Publication Date:

2009

Iris type:

01.01 Articolo in rivista

List of contributors:

Poggi, Antonella; Moscatelli, Francesco; Nipoti, Roberta; Solmi, Sandro

Authors of the University:

MOSCATELLI FRANCESCO

POGGI ANTONELLA

Handle:

https://iris.cnr.it/handle/20.500.14243/29638

Published in:

MATERIAL SCIENCE FORUM

Series