Investigation of the impacts of channel length, fin width on Si-NC SOI-FinFlash memory characteristics

This paper presents the technological process and electrical behaviour of Silicon Nano-Crystal (Si-NC) FinFlash memories fabricated on Silicon On Insulator (SOI) substrates. We study ultra-scaled memory devices (with channel length, LG, and fin width, WFIN, down to few decananometers), with Si-NC storage nodes fabricated either by LPCVD or by annealing of Silicon-Rich-Oxide, under different electrical configurations (NAND and NOR schemes).