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Impact of Al interdiffusion on optical properties in GaSb/AlGaSb multiple quantum wells

Articolo
Data di Pubblicazione:
1998
Abstract:
We have studied the effect of the Al interdiffusion on the electronic states of AlGaSb-GaSb quantum wells. Measuring the interdiffusion lengths by means of highly depth-resolved secondary ion mass spectrometry we find that the effect of Al diffusion results in the transformation of the ternary-binary system in a ternary-ternary structure. The modified energy levels, calculated on the basis of the measured chemical profile using a Posch-Teller potential, are consistent with the blue shifts of the PL peaks measured in samples grown with increasing growth temperature. (C) 1998 Elsevier Science B.V. All rights reserved.
Tipologia CRIS:
01.01 Articolo in rivista
Elenco autori:
Cingolani, Roberto; Lomascolo, Mauro
Autori di Ateneo:
LOMASCOLO MAURO
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/115561
Pubblicato in:
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Journal
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