Silicon resonant cavity enhanced photodetector at 1.55 ?m

Contributo in Atti di convegno
Data di Pubblicazione:
2005
Abstract:
In this paper we propose the design of a Silicon resonant cavity enhanced Schottky photodetector based on the internal photoemission effect, working at 1.55 mu m, and entirely compatible with ULSI Silicon technology.
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Elenco autori:
Autori di Ateneo:
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/119407
Titolo del libro:
Proc. of GROUP IV PHOTONICS
Pubblicato in:
IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (ONLINE)
Series