Hydrogen-induced metallization of a preoxidized 3C-SiC(100)3x2 surface

We investigate atomic hydrogen interaction with a preoxidized Si-rich 3C-SiC(100)3x2 surface by synchrotron radiation-based valence band, and Si 2p and C 1s core level photoemission spectroscopies. Atomic hydrogen exposure results in (i) Fermi level built-up in the valence band, (ii) band bending, and (iii) the three Si 2p surface components shifting to lower binding energies. These features indicate H-induced surface metallization. This finding opens perspectives in the metallization at the subnanometric scale of passivated semiconductor surfaces.