Data di Pubblicazione:
2015
Abstract:
The selective growth of InAs quantum dot chains self-ordered at mesoscopic distances on a rippled GaAs(001) substrate is obtained by tuning the direction of the As flux at high temperature and high As/In flux ratio. Microphotoluminescence experiments demonstrate that such isolated quantum dot chains show single quantum dot emission properties.
Tipologia CRIS:
01.01 Articolo in rivista
Elenco autori:
Placidi, Ernesto
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