Isotopic effect in deuterium-induced semiconductor surface metallization: D/3C-SiC(100) 3×2

Atomic deuterium (D) interaction with the polar 3C-SiC(100) 3×2 surface is investigated by synchrotron radiation-based valence band and core level photoemission. D is found to induce metallization of the surface. The D atoms lead to a charge transfer into the topmost Si and C planes, with D atoms terminating top surface dangling bond and an asymmetric attack in the third Si plane. However, a significant isotopic effect is observed when compared to the H-induced metallization with amazingly smaller charge transfer suggesting dynamical effects.