Initial nitride formation at Si/3C SiC(100)3×2 interface by oxynitridation

Nitric oxide interaction with 3C–SiC(100)3×2 and Si-3×2/3C–SiC(100)3×2 surfaces is investigated by synchrotron radiation-based core level photoemission spectroscopy. At 25 °C, NO exposures result in oxynitride formation, while annealing at 1000 °C removes oxygen leading to a nitride layer. Most interestingly, the results suggest stoichiometric Si3N4 layer formation at Si-3×2/3C–SiC(100)3×2 interface. This finding is of interest in limiting dopant diffusion and in defect passivation so critical at insulator/SiC interfaces.