MOCVD film growth of Al2O3 inside hot wall tubular reactor

The deposition kinetics for MOCVD film growth of Al2O3 was investigated in a range of common process parameters during laminar flow in horizontal hot wall tubular reactor. Particular attention was paid to the relationship between growth rate and reactor dimensions as well as process temperature. The development of the modeling procedure permitted to predict growth rates and precursor concentrations at different experimental conditions.