Nonresonant hydrogen dopants in In(AsN): A route to high electron concentrations and mobilities

We provide evidence for the unique effect of hydrogen on the transport properties of the mid-infrared alloy In(AsN). High electron concentrations and mobilities are simultaneously achieved in hydrogenated In(AsN), and Shubnikov-de Haas oscillations are observed up to near room temperature. These results can be accounted for by the formation of N-H donor complexes with energy levels well above the Fermi energy, far from resonance with the conduction electrons, thus resulting in weak electron scattering even at high donor concentrations. Similar effects should be found in other narrow band gap dilute nitride alloys. DOI: 10.1103/PhysRevB.87.165207