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  1. Outputs

MICROELECTRONICS AND RELIABILITY

Journal
Identifier:
E109974
ISSN:
0026-2714
  • Overview

Overview

Outputs (40)

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A comparison between normally and highly accelerated electromigration tests
Academic Article
A new on-chip test structure for real time fatigue analysis in polysilicon MEMS
Academic Article
A new on-chip test structure for real time fatigue analysis in polysilicon MEMS
Academic Article
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks
Academic Article
A percolative simulation of dielectric-like breakdown
Academic Article
A specimen-current branching approach for FA of long Electromigration test lines
Academic Article
Additional microstructural analysis on the samples examined in the paper 'Are high resolution resistometric methods really useful for the early detection of electromigration damage?'
Academic Article
Ambipolar field-effect transistor based on ?,?- dihexylquaterthiophene and ?,?-diperfluoroquaterthiophene vertical heterojunction
Academic Article
Ambipolar field-effect transistor based on ?,?- dihexylquaterthiophene and ?,?-diperfluoroquaterthiophene vertical heterojunction
Academic Article
Ambipolar field-effect transistor based on alpha,omega-dihexylquarterthiophene and alpha,omega diperfluoroquaterthiophene vertical heterojunction
Academic Article
An engineering approach to Bayes estimation for the Weibull distribution
Academic Article
An improved isothermal electromigration test for Cu-damascene characterization
Academic Article
Analysis of the effect of the gate oxide breakdown on SRAM stability
Academic Article
Are high resolution resistometric methods really useful for the early detection of electromigration damage?
Academic Article
Bayes credibility intervals for the left-truncated exponential distribution
Academic Article
Comparison between Cu(In,Ga)Se2 solar cells with different back contacts submitted to current stress
Academic Article
Defects induced anomalous breakdown kinetics in Pr2O3 by micro- and nano-characterization
Academic Article
Degradation kinetics of ultrathin HfO2 layers on Si(100) during vacuum annealing monitored with in situ XPS/LEIS and ex situ AFM
Academic Article
Dependence of post-breakdown conduction on gate oxide thickness
Academic Article
Distribution and generation of traps in SiO2/Al2O3 gate stacks
Academic Article
Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric
Academic Article
Effects of thermal and electrical stress on DH4T-based organic thin-film-transistors with PMMA gate dielectrics
Academic Article
Electrical, optical characterization and degradation of Cu(InGa)Se2 devices with fluorine-doped tin oxide back contact
Academic Article
Evidence of Chlorine Ion Penetration in InP/InAsP Quantum Well Structures during Dry Etching Processes and Effects of induced-Defects on the Electronic and Structural Behaviour
Academic Article
Hot carrier e ffects in polycrystalline silicon thin-film transistors: analysis of electrical characteristics and noise performance modifications
Academic Article
Improvement of the P/E window in nanocrystal memories by the use of high-k materials in the control dielectric
Academic Article
K-band capacitive MEMS switches on GaAs substrate: Design, fabrication, and reliability
Academic Article
LOCOS induced stress effects on SOI bipolar devices
Academic Article
Measurement of the hot carrier damage profile in LDMOS devices stressed at high drain voltage
Academic Article
On the reliability of instruments for environmental monitoring: some practical considerations.
Academic Article
Performance increase of tandem amorphous/microcrystalline Si PV devices under variable illumination and temperature conditions
Academic Article
Process dependence of BTI reliability in advanced HK MG stacks
Academic Article
Reliability assessment of multi-via Cu-damascene structures by wafer-level isothermal electromigration tests
Academic Article
Resistance changes due to Cu transport and precipitation during electromigration in submicrometric Al-0.5%Cu lines
Academic Article
Silicon dioxide deposite d by ECR-PECVD for low-temperature Si devices
Academic Article
Structure of the oxide damage under progressive breakdown
Academic Article
Study of degradation mechanisms in compound semiconductors bades devices by SEM-cathodoluminescence
Academic Article
Study of nanocrystal memory integration in a Flash-like NOR device
Academic Article
Test structures for dielectric spectroscopy of thin films at microwave frequencies
Academic Article
The influence of hydrogen and nitrogen on the formation of Si nanoclusters embedded in sub-stoichiometric silicon oxide layers
Academic Article
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