Chemical composition of InxGa1-xAs epilayers grown simultaneously on differently oriented GaAs substrates
Articolo
Data di Pubblicazione:
2001
Abstract:
We investigate the In-composition of InxGa1-xAs ternary layers epitaxially grown by molecular beam epitaxy. The epilayers of different indium content (mole fraction 0.2
Tipologia CRIS:
01.01 Articolo in rivista
Elenco autori:
Giannini, Cinzia; DE CARO, Liberato
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