Data di Pubblicazione:
2016
Abstract:
The complex electronic properties of ZrTe5 have recently stimulated in-depth investigations that assigned this material to either a topological insulator or a 3D Dirac semimetal phase. Here we report a comprehensive experimental and theoretical study of both electronic and structural properties of ZrTe5, revealing that the bulk material is a strong topological insulator (STI). By means of angle-resolved photoelectron spectroscopy, we identify at the top of the valence band both a surface and a bulk state. The
dispersion of these bands is well captured by ab initio calculations for the STI case, for the specific interlayer distance measured in our X-ray diffraction study. Furthermore, these findings are supported by scanning tunneling spectroscopy revealing the metallic character of the sample surface, thus confirming the strong topological nature of ZrTe5.
dispersion of these bands is well captured by ab initio calculations for the STI case, for the specific interlayer distance measured in our X-ray diffraction study. Furthermore, these findings are supported by scanning tunneling spectroscopy revealing the metallic character of the sample surface, thus confirming the strong topological nature of ZrTe5.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
Topological insulators; Electronic and structural properties; Ab initio calculations; Angle resolved photoelectron spectroscopy; Scanning tunneling microscopy; Interlayer distance; X-ray diffraction
Elenco autori:
Barba, Luisa; Zacchigna, Michele; Vobornik, Ivana
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