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APPLIED PHYSICS EXPRESS
Rivista
Codice:
E196575
ISSN:
1882-0778
Dati Generali
Dati Generali
Pubblicazioni (18)
Pulisci
Ordina Pubblicazioni:
ascendente
decrescente
Aluminium Implantation in Germanium: Uphill Diffusion, Electrical Activation, and Trapping
Articolo
Direct Observation at Nanoscale of Resistance Switching in NiO Layers by Conductive-Atomic Force Microscopy
Articolo
Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories
Articolo
Electrical Properties of Ultrathin SiO2 Layer Deposited at 50 degrees C by Inductively Coupled Plasma-Enahnced Chemical Vapor Deposition
Articolo
Electrical properties of extended defects in 4H-SiC investigated by photoinduced current measurements
Articolo
First Principles Investigation on the Modifications of the 4H-SiC Band Structure Due to the (4,4) and (3,5) Stacking Faults
Articolo
Geometrical Effects on Valley-Orbital Filling Patterns in Silicon Quantum Dots for Robust Qubit Implementation
Articolo
Improved Performance of In(0.53)Ga(0.47)As-Based Metal-Oxide-Semiconductor Capacitors with Al:ZrO(2) Gate Dielectric Grown by Atomic Layer Deposition
Articolo
Low In solubility and band offsets in the small-x beta-Ga2O3/(Ga1-xInx)(2)O-3 system
Articolo
Metal-insulator transition in free-standing VO2/TiO2 microstructures through low-power Joule heating
Articolo
Nanoporosity Induced by Ion Implantation in Germanium Thin Films Grown by Molecular Beam Epitaxy
Articolo
Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy
Articolo
Phase transition of bismuth telluride thin films grown by MBE
Articolo
Photon correlation in GaAs self-assembled quantum dots
Articolo
Schottky Barrier Inhomogeneities in Nickel Silicide Transrotational Contacts
Articolo
Spin-wave wavelength down-conversion at thickness steps
Articolo
Synthesis and physical properties of CaLa-Gd
Articolo
White light emission from Eu-doped SiOC films
Articolo
No Results Found
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