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MICROSCOPY MICROANALYSIS MICROSTRUCTURES
Rivista
Codice:
E110048
ISSN:
1154-2799
Dati Generali
Dati Generali
Pubblicazioni (11)
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Ordina Pubblicazioni:
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CBED STRAIN-MEASUREMENTS IN BORON IMPLANTED SILICON
Articolo
Elastic Stress Relaxation in HRTEM Specimens of Strained Semiconductor Heterostructures and its Influence on the Image Contrast
Articolo
Influence of experimental parameters on the determination of tetragonal distortion in heterostructures by LACBED
Articolo
Investigation of strain relaxation mechanisms in InGaAs/GaAs single layer films
Articolo
Investigation of strain relaxation mechanisms in InGaAs/GaAs single layer films
Articolo
Microstructural and Microanalytical Characterization of Pd Clusters in ORMOCER Matrix
Articolo
Resolution of semiconductor multilayers using backscattered electrons in scanning electron microscopy
Articolo
Strain Relaxation of Si/Ge Multilayers Investigated by Transmission Electron Microscopy and High-Resolution X-Ray Diffractometry
Articolo
Structural and analytical characterization of Si1-x Gex /Si heterostructures by Rutherford backscattering spectrometry and channeling, analytical electron microscopy and double crystal X-ray diffractometry
Articolo
Structural and analytical characterization of Si1-xGex heterostructures by Rutherford backscattering spectrometry and channeling, analytical electron microscopy and double X-ray diffractometry
Articolo
nterpretation of holographic contour maps of reverse biased pn junctions
Articolo
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