Codice:
E225723
ISSN:
1938-6737
Dati Generali
Pubblicazioni (39)
A simple approach to enhance the direct production of methane through co-electrolysis of CO2 and H2O
Contributo in Atti di convegnoAl+ ion implanted 4H-SiC: Electrical activation versus annealing time
Contributo in Atti di convegnoAtomic Layer Deposition of Al-doped ZrO2 Thin Films for Advanced Gate Stack on III-V Substrates
Contributo in Atti di convegnoCommercial SOFC fed with dry ethanol: Challenge or realty?
Contributo in Atti di convegnoDevelopment of a SOFC Hybrid System
ArticoloHigh-k materials in FLASH memories
Contributo in Atti di convegnoImproving the figure-of-merit of integrated solid-state diodes through the use of nanostructured porous silicon
Contributo in Atti di convegnoInterface Study in a "Metal/High-k" Gate Stack: Tantalum Nitride on Hafnium Oxide
Contributo in Atti di convegnoMicrostructure and Compositional Defects Affects Proton Conductivity and Reactions in Y-doped BaZrO3 Thin Films
Contributo in Atti di convegnoNovel Electrochemical Patterning Method of Silicon Carbide
Contributo in Atti di convegnoQuasi-zero-voltage controlled etching of macropores in n-type silicon
Contributo in Atti di convegnoRecent Insights in the Diffusion of Boron in Silicon and Germanium
Contributo in Atti di convegnoStrain Evaluation in SiC MEMS Test Structures
Contributo in Atti di convegnoStructural and chemical stabilization of the epitaxial silicene
Contributo in Atti di convegnoTrimethylaluminum-Based Atomic Layer Deposition of MO2 (M=Zr, Hf) Gate Dielectrics on In0.53Ga0.47As(001) Substrates
Contributo in Atti di convegnoNo Results Found