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TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN
Rivista
Codice:
E236689
ISSN:
1382-3469
Dati Generali
Dati Generali
Pubblicazioni (4)
ASSESSMENT OF MOCVD-GROWN ZnSe EPILAYERS ON GaAs BY MEANS OF SYNCHROTRON RADIATION TOPOGRAPHY
Articolo
ASSESSMENT OF MOCVD-GROWN ZnSe EPILAYERS ON GaAs BY MEANS OF SYNCHROTRON RADIATION TOPOGRAPHY
Contributo in Atti di convegno
On the role of the coupled effect of Inhibition by CO and Concentration Polarization on Hydrogen Permeation through Pd-based Membranes
Articolo
Raman scattering on the surface of semiconductors utilizing the SERS effect
Articolo
No Results Found
