Publication Date:
2013
abstract:
In this paper, the structural and electrical evolution Ti- and Ta-based Ohmic contacts on AlGaN/GaN heterostructures upon annealing has been monitored. In particular, a comparison between Ta/Al and Ti/Al stacks was done, correlating the Ohmic behavior to the formation of new phases occurring respectively at 700 °C and 500 °C. The different electrical behavior has been discussed considering the interface microstructure.
Iris type:
04.01 Contributo in Atti di convegno
List of contributors:
Greco, Giuseppe; Roccaforte, Fabrizio; Scalese, Silvia; LO NIGRO, Raffaella; Giannazzo, Filippo
Book title:
Proceedings of the 37th European Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE2013, Warrnemuende (Germany), May26th - 29th, 2013