Mobility anisotropy in langmuir-blodgett deposited poly(3-methoxypentyl-tiophene) based thin film transistors

We report on oriented thin films of poly[3-(5-methoxypentyl)-thiophene] (P5OMe) obtained by compressing a monolayer Of P5OMe formed at the air/water interface of a Langmuir trough. By using this film as the active layer of a Thin Film Transistor a mobility anisotropy ratio in the range of 10 was measured, which is an unprecedented result for a Langmuir-Blodgett (LB) film.