Data di Pubblicazione:
1995
Abstract:
The electrical behaviour of metal/diamond/silicon structures was investigated by current-voltage measurements as a function of temperature in the range 20-270 °C. The results were related to the morphology and composition of the diamond film by a nonlinear electrical model, taking into account both a temperature-independent conductance through highly defective regions and a temperature-dependent field-activated conductance through bulk diamond grains.
Tipologia CRIS:
01.01 Articolo in rivista
Elenco autori:
Cappelli, Emilia; Ascarelli, Paolo; Pinzari, Fulvia
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