Effect of stress on defect transformation in B+ and Ag+ implanted HgCdTe/CdZnTe structures

The results of X-ray, scanning electron microscopy and atomic force microscopy studies of near-surface re- gions of (111) Hg1..xCdxTe (x = 0:223) structures are presented. These structures were obtained by low-energy implantation with boron and silver ions. TRIM calculation of the depth dependences of impurity concentration and implantation-induced mechanical stresses in the layer near-surface regions has revealed that the low-energy implantation of HgCdTe solid solution with elements of different ionic radiuses (B+ and Ag+) leads to the formation of layers with significant difference in thickness (400 nm and 100 nm, respectively), as well as with maximum me- chanical stresses differing by two orders of magnitude (1:4-103 Pa and 2:2-105 Pa, respectively). The structural properties of the Hg1..xCdxTe epilayers were investigated using X-ray high-resolution reciprocal space mapping.