Relationship between V/III ratio and formation of defects in MOCVD grown (001) GaAs/Ge heterostructures
Abstract
Publication Date:
1993
Iris type:
04.02 Abstract in Atti di convegno
Keywords:
GaAs/Ge; planar defects; TEM; MOVPE; V/III ratio
List of contributors:
Attolini, Giovanni; Frigeri, Cesare; Pelosi, Claudio
Book title:
Abstract book